The 23rd RIES-HOKUDAI International Symposium

Keynote Speaker


Takashi Matsuoka

Specially Appointed Professor of Tohoku University

  • Affiliation: New Industry Creation Hatchery Center
  • Telephone: +81-22-795-4317
  • Fax: +81-22-795-4647
  • E-mail: takashi.matsuoka.b6[at]

Academic background:

  • 1976 Bachelor of Engineering
  • 1978 Master of Engineering
  • 1988 Doctor of Engineering

Professional career:

  • 1978–1985: Researcher of NTT Electrical Communication Laboratories
  • 1985–1989: Senior Researcher of NTT Photonics laboratories
  • 1989–2005: Senior Research Engineer, Supervisor of NTT Basic Research Laboratories
  • 2005–2019: Professor of Institute for Materials Research of Tohoku University
  • 2019–       : Emeritus Professor of Tohoku University

Research interests:

Semiconductors, Crystal Growth, Optical Devices, Electrical Devices

Main publications:

  1. T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, and T. Ikegami, "CW Operation of DFB-BH GaInAsP/InP Lasers in 1.5 µm Wavelength Region", Electron. Lett. 18, 27 (1982).
  2. T. Matsuoka, H. Nagai, and Y. Yoshikuni, "Verification of the Light Phase Effect at the Facet on DFB Laser Properties", IEEE J. Quantum Electron. QE-21, 1880 (1985).
  3. T. Matsuoka, H. Tanaka, T. Sasaki, and A. Katsui, "Wide-Gap Semiconductor (In, Ga)N", in Inst. Phys. Conf. Ser. 106, 141 (1990).
  4. N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, "Photoluminescence of InGaN Films Grown at High Temperature by MOVPE", Appl. Phys. Lett. 59, 2251 (1991).
  5. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, "Optical Band-Gap Energy of Wurtzite InN", Appl. Phys. Lett. 81, 1246 (2002).
  6. T. Matsuoka, T. Mitate, H. Takahata, S. Mizuno, Y. Uchiyama, A. Sasaki, M. Yoshimoto, T. Ohnishi, and M. Sumiya, "N-Polarity GaN on Sapphire Substrate Grown by MOVPE", Phys. Stat. Sol. (b) 243, 446 (2006).
  7. K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, and T. Matsuoka, "Halide Vapor Phase Epitaxy of Thick GaN Films on ScAlMgO4 Substrates and their Self-Separation for Fabricating Free-Standing Wafers", Appl. Phys. Express 10, 101001 (2017).
  8. K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, "N-polar GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching", Appl. Phys. Express 11, 015503 (2018).
  9. T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, and T. Matsuoka, "Three-Dimensional Imaging of Threading Dislocations in GaN Crystals by Two-Photon-excitation Photoluminescence", Appl. Phys. Express 11, 031004 (2018).

Awards & Honors:

  1. Best Paper Award of 10th European Conference on Optical Communication (ECOC) in 1984
  2. President Award of Nippon Telegraph and Telephone (NTT) Corporation in 1988
  3. Fellow Award of The Japan Society of Applied Physics (JSAP) in 2014
  4. APEX/JJAP Editorial Contribution Award of JSAP in 2014
  5. Achievement Award of The Japanese Association for Crystal Growth (JACG) in 2016
  6. Award for Science and Technology of “The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology” in 2017
  7. Electronics Society Award of “Department of Optical Semiconductors and Photonics” of The Institute of Electronics, Information and Communication Engineers (IEICE) in 2017
  8. 67th Kahoku Cultural Award in 2018
  9. Compound Semiconductor Electronics Achievement Award of JSAP in 2018
  10. JSAP Paper Award in 2019
  11. Emeritus Professor of Tohoku University in 2019