The 23rd RIES-HOKUDAI International Symposium

Keynote Speaker

Takashi Matsuoka
Specially Appointed Professor of Tohoku University
- Affiliation: New Industry Creation Hatchery Center
- Telephone: +81-22-795-4317
- Fax: +81-22-795-4647
- E-mail: takashi.matsuoka.b6[at]tohoku.ac.jp
Academic background:
- 1976 Bachelor of Engineering
- 1978 Master of Engineering
- 1988 Doctor of Engineering
Professional career:
- 1978–1985: Researcher of NTT Electrical Communication Laboratories
- 1985–1989: Senior Researcher of NTT Photonics laboratories
- 1989–2005: Senior Research Engineer, Supervisor of NTT Basic Research Laboratories
- 2005–2019: Professor of Institute for Materials Research of Tohoku University
- 2019– : Emeritus Professor of Tohoku University
Research interests:
Semiconductors, Crystal Growth, Optical Devices, Electrical Devices
Main publications:
- T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, and T. Ikegami, "CW Operation of DFB-BH GaInAsP/InP Lasers in 1.5 µm Wavelength Region", Electron. Lett. 18, 27 (1982).
- T. Matsuoka, H. Nagai, and Y. Yoshikuni, "Verification of the Light Phase Effect at the Facet on DFB Laser Properties", IEEE J. Quantum Electron. QE-21, 1880 (1985).
- T. Matsuoka, H. Tanaka, T. Sasaki, and A. Katsui, "Wide-Gap Semiconductor (In, Ga)N", in Inst. Phys. Conf. Ser. 106, 141 (1990).
- N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, "Photoluminescence of InGaN Films Grown at High Temperature by MOVPE", Appl. Phys. Lett. 59, 2251 (1991).
- T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, "Optical Band-Gap Energy of Wurtzite InN", Appl. Phys. Lett. 81, 1246 (2002).
- T. Matsuoka, T. Mitate, H. Takahata, S. Mizuno, Y. Uchiyama, A. Sasaki, M. Yoshimoto, T. Ohnishi, and M. Sumiya, "N-Polarity GaN on Sapphire Substrate Grown by MOVPE", Phys. Stat. Sol. (b) 243, 446 (2006).
- K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, and T. Matsuoka, "Halide Vapor Phase Epitaxy of Thick GaN Films on ScAlMgO4 Substrates and their Self-Separation for Fabricating Free-Standing Wafers", Appl. Phys. Express 10, 101001 (2017).
- K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, "N-polar GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching", Appl. Phys. Express 11, 015503 (2018).
- T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, and T. Matsuoka, "Three-Dimensional Imaging of Threading Dislocations in GaN Crystals by Two-Photon-excitation Photoluminescence", Appl. Phys. Express 11, 031004 (2018).
Awards & Honors:
- Best Paper Award of 10th European Conference on Optical Communication (ECOC) in 1984
- President Award of Nippon Telegraph and Telephone (NTT) Corporation in 1988
- Fellow Award of The Japan Society of Applied Physics (JSAP) in 2014
- APEX/JJAP Editorial Contribution Award of JSAP in 2014
- Achievement Award of The Japanese Association for Crystal Growth (JACG) in 2016
- Award for Science and Technology of “The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology” in 2017
- Electronics Society Award of “Department of Optical Semiconductors and Photonics” of The Institute of Electronics, Information and Communication Engineers (IEICE) in 2017
- 67th Kahoku Cultural Award in 2018
- Compound Semiconductor Electronics Achievement Award of JSAP in 2018
- JSAP Paper Award in 2019
- Emeritus Professor of Tohoku University in 2019