■日時
2026年 10月 1日 16:00-17:00
■講演開催場所
北海道大学 電子科学研究所1階 会議室（札幌市北区北20条西10丁目）
■講師
Nianpeng Lu 教授 (Institute of Physics, Chinese Academy of Sciences)
■演題
Ionic Gating: A New Degree of Freedom to Design Materials
■講演の要旨
Ionic gating has become a powerful way to tune the physical properties of materials, especially for the oxide films, such as the regulation in superconductivity, magnetism and metal-insulator transition. In this talk, I will present several works based on the research of ionic gating on the material system of brownmillerite ABO2.5 and perovskite ABO3, including the electric-field control of multiple phase transitions with selective dual-ion switch of hydrogen and oxygen, the electronic property modulation and the functional application in proton conductivity. Lastly, I will have a summary and outlook for the development of ionic gating on correlated and functional materials, and its potential device applications.
■主催
北海道大学電子科学研究所
■共催
公益社団法人応用物理学会北海道支部
■連絡先
北海道大学 電子科学研究所 太田 裕道
